vishay tlrg / h / o / p / y440. document number 83044 rev. 1.6, 31-aug-04 vishay semiconductors www.vishay.com 1 e3 pb pb-free v s out 19228 resistor led for 12 v supply voltage description these devices are developed for the automotive industry and other industries which use 12 v sources. the tlr.440. series contains an integrated resistor for current limiting in series with the led chip. this allows the lamp to be driven from a 12 v source with- out an external current limiter. available colors are red, soft orange, yellow, green and pure green. the luminous intensity of such an led is measured at constant voltage of 12 v. these tinted diffused lamps provide a wide off-axis viewing angle. these leds are intended for space critical applica- tions such as automobile instrument panels, switches and others which are driven from a 12 v source. features ? with current limiting resistor for 12 v cost effective: save space and resistor cost standard ? 3 mm (t-1) package wide viewing angle choice of five bright colors luminous intensity categorized yellow and green color categorized luminous intensity and color are measured at 12 v lead-free device applications status light in cars and other applications with a 12 v source off / on indicator in cars and other applications with a 12 v source background illumination for switches off / on indicator in switches parts table part color, luminous intensity angle of half intensity ( ? ) technology tlrp4400 pure green, i v > 0.63 mcd 30 gap on gap tlrp4401 pure green, i v > 1.6 mcd 30 gap on gap TLRP4406 pure green, i v = (1.6 to 5) mcd 30 gap on gap tlrh4400 red, i v > 1.6 mcd 30 gaasp on gap tlro4400 soft orange, i v > 4 mcd 30 gaasp on gap tlry4400 yellow, i v > 1.6 mcd 30 gaasp on gap tlrg4400 green, i v > 1.6 mcd 30 gap on gap
www.vishay.com 2 document number 83044 rev. 1.6, 31-aug-04 vishay tlrg / h / o / p / y440. vishay semiconductors absolute maximum ratings t amb = 25 c, unless otherwise specified tlrh4400 , tlr04400 , tlry4400 , tlrg4400 , tlrp4400 optical and electrical characteristics t amb = 25 c, unless otherwise specified red tlrh4400 1) in one packing unit i vmin /i vmax 0.5 soft orange tlro4400 1) in one packing unit i vmin /i vmax 0.5 parameter test condition symbol value unit reverse voltage v r 6v forward voltage t amb 65 c v f 16 v power dissipation t amb 65 c p v 240 mw junction temperature t j 100 c operating temperature range t amb - 40 to + 100 c storage temperature range t stg - 55 to + 100 c soldering temperature t 5 s, 2 mm from body t sd 260 c thermal resistance junction/ ambient r thja 150 k/w parameter test condition symbol min ty p. max unit luminous intensity 1) v s = 12 v i v 1.6 4 mcd dominant wavelength v s = 12 v d 612 625 nm peak wavelength v s = 12 v p 635 nm angle of half intensity v s = 12 v ? 30 deg forward current v s = 12 v i f 10 12 ma breakdown voltage i r = 10 av br 620 v junction capacitance v r = 0, f = 1 mhz c j 50 pf parameter test condition symbol min ty p. max unit luminous intensity 1) v s = 12 v i v 410 mcd dominant wavelength v s = 12 v d 598 611 nm peak wavelength v s = 12 v p 605 nm angle of half intensity v s = 12 v ? 30 deg forward current v s = 12 v i f 10 12 ma breakdown voltage i r = 10 av br 620 v junction capacitance v r = 0, f = 1 mhz c j 50 pf
vishay tlrg / h / o / p / y440. document number 83044 rev. 1.6, 31-aug-04 vishay semiconductors www.vishay.com 3 yellow tlry4400 1) in one packing unit i vmin /i vmax 0.5 green tlrg4400 1) in one packing unit i vmin /i vmax 0.5 pure green tlrp4400 1) in one packing unit i vmin /i vmax 0.5 parameter test condition symbol min ty p. max unit luminous intensity 1) v s = 12 v i v 1.6 4 mcd dominant wavelength v s = 12 v d 581 594 nm peak wavelength v s = 12 v p 585 nm angle of half intensity v s = 12 v ? 30 deg forward current v s = 12 v i f 10 12 ma breakdown voltage i r = 10 av br 620 v junction capacitance v r = 0, f = 1 mhz c j 50 pf parameter test condition symbol min ty p. max unit luminous intensity 1) v s = 12 v i v 1.6 4 mcd dominant wavelength v s = 12 v d 562 575 nm peak wavelength v s = 12 v p 565 nm angle of half intensity v s = 12 v ? 30 deg forward current v s = 12 v i f 10 12 ma breakdown voltage i r = 10 av br 620 v junction capacitance v r = 0, f = 1 mhz c j 50 pf parameter test condition part symbol min ty p. max unit luminous intensity 1) v s = 12 v tlrh4400 i v 0.63 3 mcd TLRP4406 i v 1.6 4 mcd TLRP4406 i v 1.6 5 mcd dominant wavelength v s = 12 v d 555 565 nm peak wavelength v s = 12 v p 555 nm angle of half intensity v s = 12 v ? 30 deg forward current v s = 12 v i f 10 12 ma breakdown voltage i r = 10 av br 620 v junction capacitance v r = 0, f = 1 mhz c j 50 pf
www.vishay.com 4 document number 83044 rev. 1.6, 31-aug-04 vishay tlrg / h / o / p / y440. vishay semiconductors typical characteristics (t amb = 25 c unless otherwise specified) figure 1. forward current vs. forward voltage figure 2. relative forward current vs. ambient temperature figure 3. relative forward voltage vs. ambient temperature 0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 10 12 14 16 18 20 v f - forward voltag e(v) 95 11434 f i - forward current ( ma ) red 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 t amb - ambient temperature ( c) 95 11435 v s =12v i - relative forward current frel -30 -20 -10 10 20 30 40 50 60 70 80 90 100 0 red v - relative forward voltage frel i f =10ma 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 t amb - ambient temperature ( c) 95 11436 -30 -20 -10 10 20 30 40 50 60 70 80 90 100 0 red figure 4. relative luminous intensity vs. forward voltage figure 5. rel. luminous intensity vs. ambient temperature figure 6. relative intensity vs. wavelength 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 i - relative luminous intensity vrel 0 2 4 6 8 10121416 v f - forward voltag e(v) 95 11456 red 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 v s =12v 0 102030405060 90 70 80 100 i - relative luminous intensity vrel t amb - ambient temperature ( c) 95 11437 red 590 610 630 650 670 0 0.2 0.4 0.6 0.8 1.2 690 95 10040 - wavelength ( nm ) 1.0 red i - relative luminous intensity vre l
vishay tlrg / h / o / p / y440. document number 83044 rev. 1.6, 31-aug-04 vishay semiconductors www.vishay.com 5 figure 7. forward current vs. forward voltage figure 8. relative forward current vs. ambient temperature figure 9. relative forward voltage vs. ambient temperature soft orange 0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 10 12 14 16 18 20 v f - forward voltag e(v) 95 10834 f i - forward current ( ma ) 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 t amb - ambient temperature ( c) 95 10835 v s =12v i - relative forward current frel soft orange -30 -20 -10 10 20 30 40 50 60 70 80 90 100 0 i f =10ma soft orange v - relative forward voltage frel 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 t amb - ambient temperature ( c) 95 10836 -30 -20 -10 10 20 30 40 50 60 70 80 90 100 0 figure 10. relative luminous intensity vs. forward voltage figure 11. rel. luminous intensity vs. ambient temperature figure 12. relative intensity vs. wavelength soft orange 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 i - relative luminous intensity vrel 0 2 4 6 8 10121416 v f - forward voltag e(v) 95 10837 soft orange 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 102030405060 90 70 80 100 i - relative luminous intensity vrel t amb - ambient temperature ( c) 95 10838 v s =12v 95 10324 soft orange 570 590 610 630 650 0 0.2 0.4 0.6 0.8 1.2 670 - wavelength ( nm ) 1.0 i - relative luminous intensity vrel
www.vishay.com 6 document number 83044 rev. 1.6, 31-aug-04 vishay tlrg / h / o / p / y440. vishay semiconductors figure 13. forward current vs. forward voltage figure 14. relative forward current vs. ambient temperature figure 15. relative forward voltage vs. ambient temperature 0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 10 12 14 16 18 20 v f - forward voltag e(v) 95 11438 f i - forward current ( ma ) yellow 100 90 80 70 0 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 t amb 60 50 40 30 20 10 -10 - ambient temperature ( c) 95 11439 v s =12v i - relative forward current frel yellow -20 -30 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 95 11457 i f =10ma yellow 100 90 80 70 060 50 40 30 20 10 -10 -20 -30 t amb - ambient temperature ( c) v - relative forward voltage frel figure 16. relative luminous intensity vs. forward voltage figure 17. rel. luminous intensity vs. ambient temperature figure 18. relative intensity vs. wavelength 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 02468 1 0 1 2 1 4 1 0 v f - forward voltag e(v) 95 11458 i - relative luminous intensity vrel yellow yellow 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 v s =12v 0 102030405060 90 70 80 100 i - relative luminous intensity vrel t amb - ambient temperature ( c) 95 11440 0 550 570 590 610 630 0 0.2 0.4 0.6 0.8 1.2 650 95 10039 - - wavelength ( nm ) 1.0 yellow i - relative luminous intensity vrel
vishay tlrg / h / o / p / y440. document number 83044 rev. 1.6, 31-aug-04 vishay semiconductors www.vishay.com 7 figure 19. forward current vs. forward voltage figure 20. relative forward current vs. ambient temperature figure 21. relative forward voltage vs. ambient temperature green 0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 10 12 14 16 18 20 v f - forward voltag e(v) 95 11441 f i - forward current ( ma ) 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 t amb - ambient temperature ( c) 95 11442 i - relative forward current frel -30 -20 -10 10 20 30 40 50 60 70 80 90 100 0 v s =12v green v - relative forward voltage frel 0.6 0.5 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 t amb - ambient temperature ( c) 95 11443 -30 -20 -10 10 20 30 40 50 60 70 80 90 100 0 i f =10ma green figure 22. relative luminous intensity vs. forward voltage figure 23. rel. luminous intensity vs. ambient temperature figure 24. relative intensity vs. wavelength green green 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 i - relative luminous intensity vrel 0 2 4 6 8 10121416 v f - forward voltag e(v) 95 11444 green 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 102030405060 90 70 80 100 i - relative luminous intensity vrel t amb - ambient temperature ( c) 95 11445 v s =12v 520 540 560 580 600 0 0.2 0.4 0.6 0.8 1.2 620 95 10038 - - wavelength ( nm ) 1.0 green i - relative luminous intensity vrel
www.vishay.com 8 document number 83044 rev. 1.6, 31-aug-04 vishay tlrg / h / o / p / y440. vishay semiconductors figure 25. forward current vs. forward voltage figure 26. relative forward current vs. ambient temperature figure 27. relative forward voltage vs. ambient temperature 0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 10 12 14 16 18 20 v f - forward voltag e(v) 95 11465 f i - forward current ( ma ) pure green 0.6 0.5 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 t amb - ambient temperature ( c) 95 11466 i - relative forward current frel -30 -20 -10 10 20 30 40 50 60 70 80 90 100 0 pure green v s =12v i f =10ma pure green v - relative forward voltage frel 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 t amb - ambient temperature ( c) 95 11467 -30 -20 -10 10 20 30 40 50 60 70 80 90 100 0 figure 28. relative luminous intensity vs. forward voltage figure 29. rel. luminous intensity vs. ambient temperature pure green 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 i - relative luminous intensity vrel 02 4 6 810121416 v f - forward voltag e(v) 95 11468 pure green v s =12v 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 102030405060 90 70 80 100 i - relative luminous intensity vrel t amb - ambient temperature ( c) 95 11446
vishay tlrg / h / o / p / y440. document number 83044 rev. 1.6, 31-aug-04 vishay semiconductors www.vishay.com 9 package dimensions in mm 95 10913
www.vishay.com 10 document number 83044 rev. 1.6, 31-aug-04 vishay tlrg / h / o / p / y440. vishay semiconductors ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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